| PART |
Description |
Maker |
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| 3SK184 |
GaAs N-Channel MES FET
|
Panasonic
|
| 3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation
Sony, Corp.
|
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| NE3519M04 NE3519M04-T2 NE3519M04-T2B |
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| NE3521M04-T2B-A NE3521M04-T2-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
